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PD - 91607B
IRLR/U3410
HEXFET ? Power MOSFET
l
l
l
l
l
Logic Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3410)
Straight Lead (IRLU3410)
Advanced Process Technology
G
D
V DSS = 100V
R DS(on) = 0.105 ?
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
S
D -P A K
T O -2 52 A A
Max.
I D = 17A
I-P A K
T O -25 1 A A
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
17
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ??
Peak Diode Recovery dv/dt ?
12
60
79
0.53
± 16
150
9.0
7.9
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.9
R θ JA
R θ JA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
–––
–––
50
110
°C/W
www.irf.com
1
5/11/98
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